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O
thin films on Si (100) by ion beam sputter depositionMao, W.*; Fujita, Masaya*; Chikada, Takumi*; Yamaguchi, Kenji; Suzuki, Akihiro*; Terai, Takayuki*; Matsuzaki, Hiroyuki*
Surface & Coatings Technology, 283, p.241 - 246, 2015/12
Times Cited Count：3 Percentile：13.89(Materials Science, Coatings & Films)Single-phase nanocrystalline thin films of ErO (440) has been first prepared using Si (100) substrates by ion beam sputter deposition at 973 K at a pressure of 
10
Pa and 
-
annealing at 1023 K at a pressure of 
10
Pa. Er silicides formed during the deposition are eliminated via the annealing, which results in the single phase and the smooth surface of the ErO thin films. The epitaxial relationship between Si (100) and ErO (110) is clarified by X-ray diffraction and reflection high energy electron diffraction.
Yamaguchi, Kenji
Shirisaidokei Handotai No Kagaku To Gijutsu, p.113 - 121, 2014/09
This article describes first the basic aspects of sputtering phenomena based on ion beam - solid interactions, followed by introduction of ion beam sputter deposition (IBSD) method for thin film fabrication. The article further introduces the experimental apparatus for IBSD application, equipped with an ion beam irradiation system for sputter-etching of the substrate surface. It is shown that this method is suitable for fabrication of semiconducting iron silicide film on Si substrate. The experimental results revealed that the obtained thin film is highly-oriented and continuous, forming atomically flat interface between film and the substrate.
-FeSi films on Si substrateYamaguchi, Kenji; Shimura, Kenichiro; Udono, Haruhiko*; Sasase, Masato*; Yamamoto, Hiroyuki; Shamoto, Shinichi; Hojo, Kiichi
Thin Solid Films, 508(1-2), p.367 - 370, 2006/06
Times Cited Count：12 Percentile：49.71(Materials Science, Multidisciplinary)no abstracts in English
-FeSi thin film fabricated on Si and SIMOX substrate by IBSD methodShimura, Kenichiro; Yamaguchi, Kenji; Sasase, Masato*; Yamamoto, Hiroyuki; Shamoto, Shinichi; Hojo, Kiichi
Vacuum, 80(7), p.719 - 722, 2006/05
Times Cited Count：9 Percentile：34.33(Materials Science, Multidisciplinary)no abstracts in English
-FeSi thin film prepared by ion beam sputter deposition methodShimura, Kenichiro; Yamaguchi, Kenji; Yamamoto, Hiroyuki; Sasase, Masato*; Shamoto, Shinichi; Hojo, Kiichi
Nuclear Instruments and Methods in Physics Research B, 242(1-2), p.673 - 675, 2006/01
Times Cited Count：6 Percentile：43.85(Instruments & Instrumentation)no abstracts in English
-FeSi via dry processesShimura, Kenichiro; Yamaguchi, Kenji; Sasase, Masato*; Yamamoto, Hiroyuki; Shamoto, Shinichi; Hojo, Kiichi
Nuclear Instruments and Methods in Physics Research B, 242(1-2), p.676 - 678, 2006/01
Times Cited Count：0 Percentile：0.01(Instruments & Instrumentation)no abstracts in English
-FeSi prepared by ion beam sputter deposition methodYamaguchi, Kenji; Heya, Akira*; Shimura, Kenichiro; Katsumata, Toshinobu*; Yamamoto, Hiroyuki; Hojo, Kiichi
Thin Solid Films, 461(1), p.17 - 21, 2004/08
Times Cited Count：4 Percentile：25.12(Materials Science, Multidisciplinary)no abstracts in English
Yamaguchi, Kenji; Haraguchi, Masaharu*; Katsumata, Toshinobu*; Shimura, Kenichiro; Yamamoto, Hiroyuki; Hojo, Kiichi
Thin Solid Films, 461(1), p.13 - 16, 2004/08
Times Cited Count：10 Percentile：46.84(Materials Science, Multidisciplinary)no abstracts in English
-FeSi
thin filmsShimura, Kenichiro; Katsumata, Toshinobu*; Yamaguchi, Kenji; Yamamoto, Hiroyuki; Hojo, Kiichi
Thin Solid Films, 461(1), p.22 - 27, 2004/08
Times Cited Count：8 Percentile：41.01(Materials Science, Multidisciplinary)On the formation of -FeSi using Ion Beam Sputter Deposition (IBSD) method, sputter etching (SE) followed by thermal annealing is effective substrate treatment to obtain highly (100) oriented -FeSi on Si (100). However the best condition of these treatments are not yet known. In this work, the effect of sputter etching (SE) together with annealing process on the orientation of the film is investigated. In prior to the deposition of Fe, the substrate is irradiated by Ne
ion with various energy and fluence followed by thermal annealing at 1027 K for 60 minuets. The overall results show the most suitable SE condition using Ne ion on IBSD method is the energy of 1keV with the fluence of 30
10
ions/m
.
thin film formed by ion beam sputter deposition methodHaraguchi, Masaharu*; Yamamoto, Hiroyuki; Yamaguchi, Kenji; Nakanoya, Takamitsu; Saito, Takeru; Sasase, Masato*; Hojo, Kiichi
Nuclear Instruments and Methods in Physics Research B, 206, p.313 - 316, 2003/05
Times Cited Count：17 Percentile：72.74(Instruments & Instrumentation)no abstracts in English
-FeSi film) for next generation using IBSD methodHeya, Akira*; Haraguchi, Masaharu*; Yamamoto, Hiroyuki; Saito, Takeru*; Yamaguchi, Kenji; Hojo, Kiichi
Ishikawaken Kogyo Shikenjo Heisei-14-Nendo Kenkyu Hokoku, (52), p.9 - 12, 2003/00
no abstracts in English
-FeSi thin filmHaraguchi, Masaharu; Yamamoto, Hiroyuki; Yamaguchi, Kenji; Sasase, Masato*; Nakanoya, Takamitsu; Saito, Takeru; Hojo, Kiichi
Shinku, 45(10), p.749 - 753, 2002/10
no abstracts in English
-FeSi) thin films prepared by ion beam sputter deposition (IBSD) methodSasase, Masato*; Nakanoya, Takamitsu; Yamamoto, Hiroyuki; Hojo, Kiichi
Thin Solid Films, 401(1-2), p.73 - 76, 2001/12
Times Cited Count：32 Percentile：80.45(Materials Science, Multidisciplinary)no abstracts in English
O thin film using ion beam sputter deposition methodFujita, Masaya*; Asaoka, Hidehito; Yamaguchi, Kenji
no journal, ,
Ion beam sputter deposition method has been successfully employed to obtain highly-oriented ErO thin film on Si substrate. In this study, thermal annealing of the "as deposited" film was performed under the same atmosphere as in the sputter deposition process. The XRD analysis revealed that the obtained film was found to grow in other orientations, which are not in the epitaxial relationship with Si(100) substrate. These findings were compared with previously obtained results to discuss the possible film growth mechanism.
